What I was tying to get to was this: (From the article sidebar)
6AU6A pentode: Noise floor is about 120 dB below the fundamental; second harmonic is 48 dB down [red curve, above]. Operating conditions were taken from the resistance-coupled amplifier tables in RCA tube manual RC-21, 1961, p. 438.
2N2222 low-voltage bipolar transistor: The noise floor is about 125 dB below the fundamental; the second harmonic is -30 dB. The circuit was taken from the output stage of "High-Fidelity Preamplifier," p. 609 of RCA transistor manual SC-14, 1973, with a 2N2222 substituted for the (similar) 2N3242A. A 1-k(omega) resistor was used to match the 20-(omega) output impedance of the generator to the transistor.
2N5457 low-voltage junction FET: Unlike the high-voltage MOSFET, the JFET has excellent noise performance (-140 dB) but poor distortion (second harmonic is only 30 dB down). Because of the lower Idss of available junction FETs, the drain resistor was raised to 10 k(omega); the bias was adjusted to give about 1/2 VDD at the output.
MJE2361 high-voltage bipolar transistor: In this test, the transistor was substituted for the 6SN7GTB triode, and the bias was chosen to give the same operating point as the tube. A 1-k(omega) resistor was used to match the 20-(omega) output impedance of the generator to the transistor. The result: a noise floor at about -110 dB, and a second-harmonic level of -46 dB.
IRF822 high-voltage enhancement MOSFET: When substituted for the 6SN7GTB, with bias adjusted to give the same operating point as the tube, the MOSFET exhibited excellent distortion characteristics, which were compromised by its noise floor of -100 dB—about 30 dB above the tube's. Second-harmonic distortion is 41 dB down, which is only 59 dB above the noise.
Although this is not intended to be an exhaustive examination of all available semiconductors or tubes, the resulting frequency spectra lead us to some conclusions that experienced audio designers have often remarked upon in the past.
Transistors operating on low-voltage supplies tend to have higher spectral distortion components than tubes.
If we go to high-voltage transistors, operating on supplies comparable to those of the tubes, the distortion products are less objectionable. Unfortunately, the noise floor of such devices is much higher. The IRF822 was very triode-like in distortion yet suffered from a noise floor some 30 dB higher than that of the triode.
No other active device possesses both the low distortion products and the low noise floor of the medium-mu triode—albeit at the expense of voltage gain.
The distortion products of transformers are much lower than those of active devices, yet quite different in character. Note that the odd-order harmonic products tend to be higher in level than the even-order products—exactly the reverse of the tubes and transistors.
It should be obvious that these simple circuit designs can be improved upon, by using differential topologies with constant-current loads and negative loop feedback.
It should also be obvious that the same techniques can be applied to transistors or to tubes; and if this were done, the triode would continue to enjoy some advantages over the semiconductors—and the pentode, for that matter.
When one takes into account the big picture, tubes can provide a transfer function with low distortion and maintain a suitably low noise floor. I should have made that point clearer in the post.